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500 kV High-Energy Ion Implanter High Voltage Engineering Europa B.V. B8385

Basic Information

Name: 500 kV High-Energy Ion Implanter
Manufacturer: High Voltage Engineering Europa B.V.
Model: B8385
Facility: Ion Beam Center (IBC)
Partner: Helmholtz-Zentrum Dresden-Rossendorf (HZDR)

Description

Ion Implanter, preferably for Semiconductor Prosessing

Energy range: 20 keV - 450 kV (900 keV with double charged ions)
Ions: most elements (use limited by available ion currents)

 

Ion source: IHC Bernas, gaseous and solid source feed
Energy range: 10 - 500 keV (for singly charged ions)
Scanning principle: Twofold electrostatic
Implantation chambers: 4

Link to Further Details

https://www.hzdr.de/db/Cms?pOid=41090&pNid=0

Options of instrument usage

Points of Contact

Dr. Stefan Facsko/ Mrs. Annette Wei├čig (Office)
Email:
Phone:
+49 351 260 - 2343
Fax:
+49 351 260 - 13378

Images

Last Update

Last updated at: 17 February 2019 at 19:11:18