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200 kV High-Current Ion Implanter Danfysik A/S /Denmark) DANFYSIK 1090

Basic Information

Name: 200 kV High-Current Ion Implanter
Manufacturer: Danfysik A/S /Denmark)
Model: DANFYSIK 1090
Facility: Ion Beam Center (IBC)
Partner: Helmholtz-Zentrum Dresden-Rossendorf (HZDR)

Description

200 kV Ion Implanter with two beamlines for metal / ceramics / dielectrics or semiconductor processing
Energy: 20 keV - 200 keV
Ions: most elements (use partly limited by available ion currents)

 

Ion source: Hot filament,
gaseous and solid source feed
Energy range: 20 - 200 keV (for singly charged ions)
Scanning principle: Twofold magnetic / electrostatic (chamber 1/2)
Implantation chambers: 2

Link to Further Details

https://www.hzdr.de/db/Cms?pOid=41090&pNid=0

Options of instrument usage

Points of Contact

Dr. Stefan Facsko/ Mrs. Annette Wei├čig (Office)
Email:
Phone:
+49 351 260 - 2343
Fax:
+49 351 260 - 13378

Images

Last Update

Last updated at: 17 February 2019 at 19:06:55