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40 kV Low-Energy Ion Implanter Danfysik A/S DANFYSIK 1050

Basic Information

Name: 40 kV Low-Energy Ion Implanter
Manufacturer: Danfysik A/S
Model: DANFYSIK 1050
Facility: Ion Beam Center (IBC)
Partner: Helmholtz-Zentrum Dresden-Rossendorf (HZDR)

Description

Low-energy ion implanter, mainly for semiconductor processing
Energy range: 0.5 - 40 keV
Ions: most elements (use partly limited by available ion currents)

 

Ion source: Chordis,
gaseous and solid source feed
Energy range: 100 eV - 40 keV (for singly charged ions)
Scanning principle: Twofold electrostatic
Implantation chambers: 1

Link to Further Details

https://www.hzdr.de/db/Cms?pOid=41090&pNid=0

Options of instrument usage

Points of Contact

Dr. Stefan Facsko/ Mrs. Annette Wei├čig (Office)
Email:
Phone:
+49 351 260 - 2343
Fax:
+49 351 260 - 13378

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Last Update

Last updated at: 17 February 2019 at 19:06:06