High-k Devices (Group)of the Center Nanoelectronic Technologies (CNT)
Fraunhofer Institute for Photonic Microsystems (IPMS)
|phone:||+49 351 2607-3040|
|fax:||+49 351 2607-3005|
|address:||Fraunhofer Institute for Photonic Microsystems (IPMS), Center Nanoelectronic Technologies, High-k Devices, Königsbrücker Str. 178, 01099 Dresden, Germany|
|Center:||Center Nanoelectronic Technologies (CNT)|
|partner:||Fraunhofer Institute for Photonic Microsystems|
The “High-k Devices” focus group develops technologies for the integration of high-k materials into microchips and offers the entire value-adding chain from chemical precursors, material screening, process development, reliability testing right through to pilot production. There is a particular focus on Atomic Layer Deposition (ALD).
The Center Nanoelectronic Technologies is also co-founder of the competence center for Atomic Layer Deposition - ALD Lab Dresden, an association of 8 institutes for a comprehensive expertise and capabilities in the field of ALD. Furthermore, the High-k group is working on ferroelectric memories and materials such as hafnium, zirconium, strontium, ruthenium or tantalum for the application on 300 mm wafer.
|Center Nanoelectronic Technologies (CNT)||Center|
Last updated at: 2016-07-14 07:58